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| CLE320W High Power Aluminum Gallium Arsenide 810nm IRED 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.114 (2.9) 0.098 (2.5) 0.50 (12.7) min. 1.00 (25.4) min. (R) Clairex July, 2004 Technologies, Inc. 0.100 (2.54) dia. 0.215 (5.46) 0.205 (5.21) ANODE (connected to case) CATHODE CATHODE 0.190 (4.83) 0.176 (4.47) 0.025 (0.64) max. 0.010 (0.25) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 3 features * * * * * * anode connected to case wide emission angle excellent heat dissipation high speed operation 35 emission angle RoHS compliant absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature....................................................................... -65C to +150C operating temperature.................................................................... -65C to +125C lead soldering temperature(1) ......................................................................... 260C (2) continuous forward current .........................................................................100mA peak forward current (1.0ms pulse width, 10% duty cycle) ..................................1A reverse voltage ....................................................................................................5V continuous power dissipation(3) ....................................................................200mW description The CLE320W contains a double notes: heterojunction AlGaAs infrared 1. 0.06" (1.5mm) from the header for 5 seconds maximum. emitting diode mounted in a low 2. Derate linearly 0.80mA/C from 25C free air temperature to TA = +125C. profile, flat window, TO-46 hermetic 3. Derate linearly 1.6mW/C from 25C free air temperature to TA = +125C. package. The wide emission angle provides even illumination over a large area. For additional information, call Clairex. electrical characteristics (TA = 25C unless otherwise noted) symbol PO VF IR p BW HP CJ tr, tf parameter Total power output Forward voltage Reverse current Peak emission wavelength Spectral bandwidth at half power points Emission angle at half power points Junction capacitance Output rise and fall time min 800 - typ 25 810 50 70 30 10 max 2.5 10 820 - units mW V A nm nm deg. pF ns test conditions IF = 100mA IF = 100mA VR = 5.0V IF = 100mA IF = 100mA IF = 100mA VR = 0V, f = 1MHz IF = 50mA Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/15/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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